发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12695443申请日： 2010-01-28
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公开(公告)号： US08324687B2公开(公告)日： 2012-12-04
- 发明人: Tomomitsu Risaki , Shoji Nakanishi , Koichi Shimazaki
- 申请人： Tomomitsu Risaki , Shoji Nakanishi , Koichi Shimazaki
- 申请人地址： JP Chiba
- 专利权人： Seiko Instruments Inc.
- 当前专利权人： Seiko Instruments Inc.
- 当前专利权人地址： JP Chiba
- 代理机构： Brinks Hofer Gilson & Lione
- 优先权： JP2009-018251 20090129
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
Provided is a semiconductor device comprising: a PW layer formed at a surface of a semiconductor substrate; an NW layer formed at the surface of the semiconductor substrate to be in contact with the PW layer; a p+ base layer formed at the surface of the semiconductor substrate in the PW layer; an n+ collector layer formed at the surface of the semiconductor substrate in the NW layer; an n+ emitter layer located between the p+ base layer and the n+ collector layer and formed at the surface of the semiconductor substrate in the PW layer; and an n± layer formed between the n+ collector layer and the PW layer to be in contact with the n+ collector layer.
公开/授权文献
- US20100187608A1 SEMICONDUCTOR DEVICE 公开/授权日：2010-07-29
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