发明授权
- 专利标题： Method for manufacturing semiconductor device using a laser annealing process
- 专利标题（中）： 使用激光退火工艺制造半导体器件的方法
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申请号： US12750739申请日： 2010-03-31
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公开(公告)号： US08329520B2公开(公告)日： 2012-12-11
- 发明人: Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Takuya Hirohashi
- 申请人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Takuya Hirohashi
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-090471 20090402
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
An island-shaped single crystal semiconductor layer whose top surface has a plane within ±10° from a {211} plane is formed on an insulating surface; a non-single-crystal semiconductor layer is formed in contact with the top surface and a side surface of the single crystal semiconductor layer and on the insulating surface; the non-single-crystal semiconductor layer is irradiated with laser light to melt the non-single-crystal semiconductor layer, and to crystallize the non-single-crystal semiconductor layer formed on the insulating surface with use of the single crystal semiconductor layer as a seed crystal, so that a crystalline semiconductor layer is formed. A semiconductor device having an n-channel transistor and a p-channel transistor formed with use of the crystalline semiconductor layer is provided.
公开/授权文献
- US20100255645A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2010-10-07
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