发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US13151867申请日： 2011-06-02
-
公开(公告)号： US08329584B2公开(公告)日： 2012-12-11
- 发明人: Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
- 申请人： Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2006-331965 20061208
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
公开/授权文献
- US20110230051A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2011-09-22
信息查询
IPC分类:
