发明授权
US08330483B2 Semiconductor device to detect abnormal leakage current caused by a defect
失效
半导体器件检测由缺陷引起的异常漏电流
- 专利标题： Semiconductor device to detect abnormal leakage current caused by a defect
- 专利标题（中）： 半导体器件检测由缺陷引起的异常漏电流
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申请号： US12516583申请日： 2007-11-22
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公开(公告)号： US08330483B2公开(公告)日： 2012-12-11
- 发明人: Masayuki Mizuno
- 申请人： Masayuki Mizuno
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-322149 20061129
- 国际申请： PCT/JP2007/072612 WO 20071122
- 国际公布： WO2008/069025 WO 20080612
- 主分类号： G01R31/26
- IPC分类号： G01R31/26
摘要：
Disclosed is a semiconductor device in which a circuit in the semiconductor chip is divided into a plurality of sub-circuits. The semiconductor device includes switches between the respective sub-circuits and a power supply, and a circuit that variably controls on-resistances of the switches 111 to 11N.
公开/授权文献
- US20100066401A1 SEMICONDUCTOR DEVICE 公开/授权日：2010-03-18
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