发明授权
- 专利标题： Apparatus for etching semiconductor wafers
- 专利标题（中）： 用于蚀刻半导体晶片的设备
-
申请号： US12121599申请日： 2008-05-15
-
公开(公告)号： US08333842B2公开(公告)日： 2012-12-18
- 发明人: Dmitry Lubomirsky , Tien Fak Tan , Lun Tsuei
- 申请人： Dmitry Lubomirsky , Tien Fak Tan , Lun Tsuei
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
公开/授权文献
- US20090283217A1 APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS 公开/授权日：2009-11-19
信息查询
IPC分类:
