Invention Grant
- Patent Title: MEMS pressure sensor using capacitive technique
- Patent Title (中): MEMS压力传感器采用电容技术
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Application No.: US12414616Application Date: 2009-03-30
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Publication No.: US08334159B1Publication Date: 2012-12-18
- Inventor: Yee-Chung Fu
- Applicant: Yee-Chung Fu
- Applicant Address: US CA San Jose
- Assignee: Advanced NuMicro Systems, Inc.
- Current Assignee: Advanced NuMicro Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patent Law Group LLP
- Agent David C. Hsia
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/84 ; G01P15/08 ; H04R23/00 ; G01L9/00

Abstract:
A micro-electro-mechanical system (MEMS) pressure sensor includes a silicon spacer defining an opening, a silicon membrane layer mounted above the spacer, a silicon sensor layer mounted above the silicon membrane layer, and a capacitance sensing circuit. The silicon membrane layer forms a diaphragm opposite of the spacer opening, and a stationary perimeter around the diaphragm and opposite the spacer. The silicon sensor layer includes an electrode located above the diaphragm of the silicon membrane layer. The capacitance sensing circuit is coupled to the electrode and the silicon membrane layer. The electrode and the silicon membrane layer move in response to a pressure applied to the diaphragm. The movement of the silicon membrane layer causes it to deform, thereby changing the capacitance between the electrode and the silicon membrane layer by an amount proportional to the change in the pressure.
Information query
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