Invention Grant
- Patent Title: Image sensor and fabrication method thereof
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US12691704Application Date: 2010-01-21
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Publication No.: US08334164B2Publication Date: 2012-12-18
- Inventor: Takashi Miida
- Applicant: Takashi Miida
- Applicant Address: TW Hsinchu Science Park, Hsinchu
- Assignee: Powerchip Technology Corporation
- Current Assignee: Powerchip Technology Corporation
- Current Assignee Address: TW Hsinchu Science Park, Hsinchu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer positioned on the shield electrode and the pixel electrodes, and a transparent conductive layer covering the photo conductive layer.
Public/Granted literature
- US20100120193A1 IMAGE SENSOR AND FABRICATION METHOD THEREOF Public/Granted day:2010-05-13
Information query
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