Invention Grant
- Patent Title: Methods and apparatus for manufacturing semiconductor wafers
- Patent Title (中): 用于制造半导体晶圆的方法和装置
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Application No.: US12026586Application Date: 2008-02-06
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Publication No.: US08334194B2Publication Date: 2012-12-18
- Inventor: Ralf Jonczyk , James Rand
- Applicant: Ralf Jonczyk , James Rand
- Applicant Address: US DE Newark
- Assignee: Motech Americas, LLC
- Current Assignee: Motech Americas, LLC
- Current Assignee Address: US DE Newark
- Agency: Saul Ewing LLP
- Main IPC: H01L21/324
- IPC: H01L21/324

Abstract:
Methods and apparatus for fabricating a semiconductor sheet are provided. In one aspect, a method for fabricating a semiconductor wafer includes applying a layer of semiconductor material across a portion of a setter material, introducing the setter material and the semiconductor material to a predetermined thermal gradient to form a melt, wherein the thermal gradient includes a predetermined nucleation and growth region, and forming at least one local cold spot in the nucleation and growth region to facilitate inducing crystal nucleation at the at least one desired location.
Public/Granted literature
- US20090194849A1 METHODS AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR WAFERS Public/Granted day:2009-08-06
Information query
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