公开(公告)号：US20090280336A1

公开(公告)日：2009-11-12

申请号：US12117652

申请日：2008-05-08

Applicant: Ralf Jonczyk ,  James Rand

Inventor： Ralf Jonczyk ,  James Rand

IPC: B32B9/04 ,  H01L21/203

CPC classification number: H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a sheet of semiconductor material is provided. The method includes forming a first layer of silicon powder that has a lower surface and an opposite upper surface. The method also includes depositing a second layer of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface and an opposite upper surface and has a lower melting point than the first layer of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of at least one of the first and second layers of silicon powder, and cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder.

Abstract translation: 提供了制造半导体材料片的方法。 该方法包括形成具有下表面和相对上表面的第一硅粉末层。 该方法还包括在第一层的上表面上沉积第二层硅粉末，其中第二层硅粉末具有下表面和相对的上表面，并且具有比第一层硅粉末更低的熔点。 该方法还包括加热硅粉末的第一和第二层中的至少一个以引发第一和第二硅粉层中的至少一个的受控熔体，并且冷却硅粉末的第一和第二层中的至少一个 以引发第一和第二层硅粉末中的至少一个的结晶。

公开(公告)号：US08334194B2

公开(公告)日：2012-12-18

申请号：US12026586

申请日：2008-02-06

Applicant: Ralf Jonczyk ,  James Rand

Inventor： Ralf Jonczyk ,  James Rand

IPC: H01L21/324

CPC classification number: H01L31/18 ,  C30B13/16 ,  C30B29/06 ,  H01L21/02667

Abstract: Methods and apparatus for fabricating a semiconductor sheet are provided. In one aspect, a method for fabricating a semiconductor wafer includes applying a layer of semiconductor material across a portion of a setter material, introducing the setter material and the semiconductor material to a predetermined thermal gradient to form a melt, wherein the thermal gradient includes a predetermined nucleation and growth region, and forming at least one local cold spot in the nucleation and growth region to facilitate inducing crystal nucleation at the at least one desired location.

Abstract translation: 提供了制造半导体薄片的方法和设备。 一方面，一种用于制造半导体晶片的方法包括在固化材料的一部分上施加半导体材料层，将固化剂材料和半导体材料引入预定的热梯度以形成熔体，其中该热梯度包括 预定的成核和生长区，并且在成核和生长区中形成至少一个局部冷点，以促进在所述至少一个所需位置处诱导晶体成核。

公开(公告)号：US20090194849A1

公开(公告)日：2009-08-06

申请号：US12026586

申请日：2008-02-06

Applicant: Ralf Jonczyk ,  James Rand

Inventor： Ralf Jonczyk ,  James Rand

IPC: H01L29/00 ,  H01L21/20

CPC classification number: H01L31/18 ,  C30B13/16 ,  C30B29/06 ,  H01L21/02667

Abstract: Methods and apparatus for fabricating a semiconductor sheet are provided. In one aspect, a method for fabricating a semiconductor wafer includes applying a layer of semiconductor material across a portion of a setter material, introducing the setter material and the semiconductor material to a predetermined thermal gradient to form a melt, wherein the thermal gradient includes a predetermined nucleation and growth region, and forming at least one local cold spot in the nucleation and growth region to facilitate inducing crystal nucleation at the at least one desired location.

Abstract translation: 提供了制造半导体薄片的方法和设备。 一方面，一种用于制造半导体晶片的方法包括在固化材料的一部分上施加半导体材料层，将固化剂材料和半导体材料引入预定的热梯度以形成熔体，其中该热梯度包括 预定的成核和生长区，并且在成核和生长区中形成至少一个局部冷点，以促进在所述至少一个所需位置处诱导晶体成核。

公开(公告)号：US20070034251A1

公开(公告)日：2007-02-15

申请号：US10562518

申请日：2004-07-26

Applicant: Ralf Jonczyk ,  Scott Kendall ,  James Rand

Inventor： Ralf Jonczyk ,  Scott Kendall ,  James Rand

IPC: H01L31/00

CPC classification number: H01L31/1804 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1876 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: There is provided a structure comprising semiconductor material, the structure having at least one zone of reduced oxygen concentration, such zone having an interstitial oxygen concentration of not greater than 3×1017 oxygen atoms/cm3, such zone extending at least 75 microns in depth from a first major surface. There is further provided a photovoltaic cell comprising at least one such structure.

Abstract translation: 提供了包括半导体材料的结构，该结构具有至少一个氧浓度降低的区域，该区域的间隙氧浓度不大于3×10 17个氧原子/ cm 3， / SUP>，该区域从第一主表面延伸至少75微米深。 还提供了包括至少一个这样的结构的光伏电池。

公开(公告)号：US20080308970A1

公开(公告)日：2008-12-18

申请号：US11763806

申请日：2007-06-15

Applicant: Ralf Jonczyk ,  James Rand ,  Victor Lienkong Lou

Inventor： Ralf Jonczyk ,  James Rand ,  Victor Lienkong Lou

IPC: B29C43/22

CPC classification number: C01B33/021 ,  C01B33/02 ,  C01B33/037

Abstract: A process for melting powders of a semiconductor material, such as silicon, to yield a high-purity solid product. The process generally entails introducing the powder into an elevated end of a tube inclined from horizontal and, while maintaining an inert atmosphere within the tube, rotating the tube so as to agitate and cause the powder therein to flow toward an oppositely-disposed lower end of the tube while heating the tube so that the powder melts as it flows toward the lower end of the tube. The molten material is then allowed to flow freely from the lower end of the tube and subsequently solidify to form a product.

Abstract translation: 熔融半导体材料如硅的粉末以产生高纯度固体产物的方法。 该方法通常需要将粉末引入从水平倾斜的管的升高端，并且在管内保持惰性气氛的同时，旋转管以便搅动并使其中的粉末流向相对设置的下端 同时加热管，使得粉末在流向管的下端时熔化。 然后使熔融材料从管的下端自由流动，随后固化形成产物。

公开(公告)号：US20050176218A1

公开(公告)日：2005-08-11

申请号：US11046535

申请日：2005-01-28

Applicant: Ralf Jonczyk ,  Scott Kendall ,  James Rand

Inventor： Ralf Jonczyk ,  Scott Kendall ,  James Rand

IPC: C30B11/00 ,  C30B13/00 ,  C30B29/64 ,  H01L21/00 ,  H01L29/06 ,  H01L31/0236 ,  H01L31/18 ,  H01L21/36 ,  C30B1/00 ,  H01L21/20

CPC classification number: H01L21/67109 ,  C30B11/002 ,  C30B13/00 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/906 ,  Y10S438/958

Abstract: There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.

Abstract translation: 提供了一种制造晶片的方法，包括将半导体材料沉积到固定器的凹部中，通过加热/冷却区域移动固定器以使半导体材料受到温度分布，以及从凹部移除晶片。 当使用晶片时，晶片的尺寸和形状基本上等于晶片的尺寸。 结果，晶片可以以任何期望的形状和各种表面结构特征和/或内部结构特征中的任一种制造。 可以严格控制温度曲线，使得能够生产具有以前不可获得的结构特征的晶片。 还提供了通过这种方法和设置器形成的用于这种方法的晶片。

公开(公告)号：US20060048698A1

公开(公告)日：2006-03-09

申请号：US10529350

申请日：2003-09-26

Applicant: Robert Hall ,  Scott Kendall ,  James Rand ,  Paul Sims

Inventor： Robert Hall ,  Scott Kendall ,  James Rand ,  Paul Sims

IPC: C30B13/00 ,  C30B19/00

CPC classification number: C01B33/037 ,  C01B33/039 ,  C30B11/00 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06

Abstract: There are provided methods of purifying a material, comprising melting solid material to form liquefied material, directionally solidifying a portion of the liquefied material; and removing a liquid remainder from the purified solidified material. Preferably, the purified solidified material is melted to form re-liquefied purified material, and re-liquefied purified material is removed. Preferably, the material is positioned in a container as it is being purified. The method is particularly useful for purifying elemental material, e.g., semiconductor material such as silicon and/or germanium, such as recycle scrap silicon and/or metallurgical grade silicon. There are also provided systems for carrying out such methods.

Abstract translation: 提供了净化材料的方法，包括熔化固体材料以形成液化材料，定向凝固液化材料的一部分; 并从纯化的固化材料中除去液体剩余物。 优选地，将纯化的固化材料熔化以形成再液化的纯化材料，并且除去再液化的纯化材料。 优选地，当材料被净化时，将其定位在容器中。 该方法特别可用于纯化元素材料，例如诸如硅和/或锗的半导体材料，例如再循环废料硅和/或冶金级硅。 还提供了用于执行这种方法的系统。

公开(公告)号：US20150229269A1

公开(公告)日：2015-08-13

申请号：US14616373

申请日：2015-02-06

Applicant: James Rand ,  Mason Reed ,  Eric Daniels

Inventor： James Rand ,  Mason Reed ,  Eric Daniels

IPC: H02S50/15

CPC classification number: H02S50/15

Abstract: Devices and processes are provided configured to test electrical and physical function of photovoltaic modules at the location where the photovoltaic modules are installed and without having to disconnect the photovoltaic modules from their mechanical support or electrical circuits.

Abstract translation: 提供的设备和过程被配置为在光伏组件安装的位置测试光伏模块的电和物理功能，而不必将光伏模块与其机械支撑或电路断开连接。