发明授权
- 专利标题： Semiconductor light-emitting device, method of manufacturing semiconductor light-emitting device, and lamp
- 专利标题（中）： 半导体发光元件，半导体发光元件的制造方法以及灯
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申请号： US12296849申请日： 2007-04-13
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公开(公告)号： US08334200B2公开(公告)日： 2012-12-18
- 发明人: Naoki Fukunaga , Hiroshi Osawa
- 申请人： Naoki Fukunaga , Hiroshi Osawa
- 申请人地址： JP Tokyo
- 专利权人： Showa Denko K.K.
- 当前专利权人： Showa Denko K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JPP2006-112012 20060414
- 国际申请： PCT/JP2007/058193 WO 20070413
- 国际公布： WO2007/119830 WO 20071025
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L21/441
摘要：
The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14. The transparent electrode 15 includes a crystallized IZO film.
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