Invention Grant
- Patent Title: Method of reducing electron beam damage on post W-CMP wafers
- Patent Title (中): 减少后置W-CMP晶片电子束损伤的方法
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Application No.: US11525492Application Date: 2006-09-21
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Publication No.: US08334209B2Publication Date: 2012-12-18
- Inventor: David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
- Applicant: David A. Daycock , Paul A. Morgan , Shawn D. Lyonsmith , Curtis R. Olson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
Methods for reducing electron beam induced damage on semiconductor substrates employ compositions such as small chain organic solvents and non-neutral pH solutions to reduce or eliminate charge imbalances on semiconductor substrates caused by electron beam inspection of the semiconductor substrates. Damage to semiconductor substrates by electron beam inspection processes may also be reduced by generating or otherwise forming passivation films on a semiconductor substrate following electron beam inspection.
Public/Granted literature
- US20080076263A1 Method of reducing electron beam damage on post W-CMP wafers Public/Granted day:2008-03-27
Information query
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