发明授权
US08334543B2 III-V light emitting device including a light extracting structure 有权
III-V发光器件包括光提取结构

III-V light emitting device including a light extracting structure
摘要:
Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
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