发明授权
US08335100B2 Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array 有权
二极管访问交叉点电阻式存储器阵列的电路,偏置方案和制造方法

  • 专利标题: Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
  • 专利标题(中): 二极管访问交叉点电阻式存储器阵列的电路,偏置方案和制造方法
  • 申请号: US11812004
    申请日: 2007-06-14
  • 公开(公告)号: US08335100B2
    公开(公告)日: 2012-12-18
  • 发明人: Jun LiuDavid Porter
  • 申请人: Jun LiuDavid Porter
  • 申请人地址: US ID Boise
  • 专利权人: Micron Technology, Inc.
  • 当前专利权人: Micron Technology, Inc.
  • 当前专利权人地址: US ID Boise
  • 代理机构: Dickstein Shapiro LLP
  • 主分类号: G11C11/00
  • IPC分类号: G11C11/00
Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
摘要:
Methods, systems, structures and arrays are disclosed, such as a resistive memory array which includes access devices, for example, back-to-back Zener diodes, that only allow current to pass through a coupled resistive memory cell when a voltage drop applied to the access device is greater than a critical voltage. The array may be biased to reduce standby currents and improve delay times between programming and read operations.
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