发明授权
US08335100B2 Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
有权
二极管访问交叉点电阻式存储器阵列的电路,偏置方案和制造方法
- 专利标题: Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
- 专利标题(中): 二极管访问交叉点电阻式存储器阵列的电路,偏置方案和制造方法
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申请号: US11812004申请日: 2007-06-14
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公开(公告)号: US08335100B2公开(公告)日: 2012-12-18
- 发明人: Jun Liu , David Porter
- 申请人: Jun Liu , David Porter
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dickstein Shapiro LLP
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Methods, systems, structures and arrays are disclosed, such as a resistive memory array which includes access devices, for example, back-to-back Zener diodes, that only allow current to pass through a coupled resistive memory cell when a voltage drop applied to the access device is greater than a critical voltage. The array may be biased to reduce standby currents and improve delay times between programming and read operations.
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