Invention Grant
- Patent Title: Capacitively coupled plasma reactor having very agile wafer temperature control
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Application No.: US12855678Application Date: 2010-08-12
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Publication No.: US08337660B2Publication Date: 2012-12-25
- Inventor: Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
- Applicant: Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
- Applicant Address: US FL Wellington
- Assignee: B/E Aerospace, Inc.
- Current Assignee: B/E Aerospace, Inc.
- Current Assignee Address: US FL Wellington
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23C16/46 ; C23C16/52 ; H01L21/683

Abstract:
A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
Public/Granted literature
- US20100303680A1 CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL Public/Granted day:2010-12-02
Information query
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