Invention Grant
US08337661B2 Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
有权
等离子体反应器，通过同步调制无与伦比的低功率射频发生器，实现等离子体负载阻抗调谐，实现工程瞬变
- Patent Title: Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
- Patent Title (中): 等离子体反应器，通过同步调制无与伦比的低功率射频发生器，实现等离子体负载阻抗调谐，实现工程瞬变
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Application No.: US12128926Application Date: 2008-05-29
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Publication No.: US08337661B2Publication Date: 2012-12-25
- Inventor: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00
Abstract:
A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
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