发明授权
- 专利标题: Magnetic tunnel junction structure having free layer with oblique magnetization
- 专利标题(中): 磁隧道结结构具有倾斜磁化的自由层
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申请号: US12608103申请日: 2009-10-29
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公开(公告)号: US08338004B2公开(公告)日: 2012-12-25
- 发明人: Kyung Ho Shin , Byoung Chul Min
- 申请人: Kyung Ho Shin , Byoung Chul Min
- 申请人地址: KR
- 专利权人: Korea Institute of Science and Technology
- 当前专利权人: Korea Institute of Science and Technology
- 当前专利权人地址: KR
- 代理机构: Ostrolenk Faber LLP
- 优先权: KR10-2008-0106942 20081030
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; H01F10/32 ; G11C11/02
摘要:
The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction and a second magnetic layer having a reversible magnetization direction. A non-magnetic layer is formed between the first magnetic layer and the second magnetic layer and a third magnetic layer allows the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer with a vertical magnetic anisotropic energy thereof larger than a horizontal magnetic anisotropic energy thereof. A crystal-structure separation layer is formed between the second magnetic layer and the third magnetic layer for separating a crystal orientation between the second and the third magnetic layers.
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