发明授权
US08338004B2 Magnetic tunnel junction structure having free layer with oblique magnetization 有权
磁隧道结结构具有倾斜磁化的自由层

Magnetic tunnel junction structure having free layer with oblique magnetization
摘要:
The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction and a second magnetic layer having a reversible magnetization direction. A non-magnetic layer is formed between the first magnetic layer and the second magnetic layer and a third magnetic layer allows the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer with a vertical magnetic anisotropic energy thereof larger than a horizontal magnetic anisotropic energy thereof. A crystal-structure separation layer is formed between the second magnetic layer and the third magnetic layer for separating a crystal orientation between the second and the third magnetic layers.
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