公开(公告)号：US08338004B2

公开(公告)日：2012-12-25

申请号：US12608103

申请日：2009-10-29

申请人： Kyung Ho Shin ,  Byoung Chul Min

发明人： Kyung Ho Shin ,  Byoung Chul Min

IPC分类号： G11B5/39 ,  H01F10/32 ,  G11C11/02

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3277 ,  H01F10/3286 ,  H01L43/08 ,  H03B15/006 ,  Y10T428/1114 ,  Y10T428/1143

摘要： The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction and a second magnetic layer having a reversible magnetization direction. A non-magnetic layer is formed between the first magnetic layer and the second magnetic layer and a third magnetic layer allows the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer with a vertical magnetic anisotropic energy thereof larger than a horizontal magnetic anisotropic energy thereof. A crystal-structure separation layer is formed between the second magnetic layer and the third magnetic layer for separating a crystal orientation between the second and the third magnetic layers.

摘要翻译： 本发明提供一种磁性隧道结结构，其包括具有固定磁化方向的第一磁性层和具有可逆磁化方向的第二磁性层。 在第一磁性层和第二磁性层之间形成非磁性层，第三磁性层允许第二磁性层的磁化方向相对于第二磁性层的平面通过磁耦合 第二磁性层，其垂直磁性各向异性能量大于其水平磁各向异性能。 在第二磁性层和第三磁性层之间形成晶体结构分离层，用于分离第二和第三磁性层之间的晶体取向。

公开(公告)号：US08841006B2

公开(公告)日：2014-09-23

申请号：US12658853

申请日：2010-02-16

申请人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

发明人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

IPC分类号： G11C11/02 ,  H01F10/32 ,  H01F10/14 ,  G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L43/10 ,  H01L43/12 ,  G01R33/09 ,  H01F10/12

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/14 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10 ,  Y10T428/115

摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。

公开(公告)号：US20110045320A1

公开(公告)日：2011-02-24

申请号：US12658853

申请日：2010-02-16

申请人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

发明人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

IPC分类号： G11B5/706 ,  H01F1/01

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/14 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10 ,  Y10T428/115

摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。

公开(公告)号：US08775139B2

公开(公告)日：2014-07-08

申请号：US13162406

申请日：2011-06-16

申请人： Jae Wan Shim ,  Hyun Cheol Koo ,  Suk Hee Han ,  Byoung Chul Min ,  Jun Woo Choi ,  Kyung Ho Shin ,  Jin Dong Song

发明人： Jae Wan Shim ,  Hyun Cheol Koo ,  Suk Hee Han ,  Byoung Chul Min ,  Jun Woo Choi ,  Kyung Ho Shin ,  Jin Dong Song

IPC分类号： G06G7/50 ,  G06G7/48 ,  G06F17/50 ,  G06T13/20 ,  G06T13/80

CPC分类号： G06F17/5018 ,  G06F17/5009 ,  G06F2217/16 ,  G06T13/20 ,  G06T13/80

摘要： A method for simulating fluid flow includes: discretizing a space in which a fluid flows into a regular lattice; assuming that fluid particles repetitively move and collide in the lattice; deriving a univariate polynomial equation by comparing the n-th (n is a non-negative integer) order momentum of velocity between the Maxwell-Boltzmann distribution and the discretized Maxwell-Boltzmann distribution; calculating the weight coefficients corresponding to the discrete velocities of the fluid particles based on the univariate polynomial equation; and deriving a lattice Boltzmann model using the weight coefficients. A lattice Boltzmann model with superior stability and accuracy may be derived easily.

摘要翻译： 用于模拟流体流动的方法包括：离散流体流入规则晶格的空间; 假设流体颗粒在格子中重复地移动和碰撞; 通过比较Maxwell-Boltzmann分布与离散Maxwell-Boltzmann分布之间的速度的第n（n是非负整数）阶次动量，得出单变量多项式方程; 基于单变量多项式方程计算与流体颗粒的离散速度对应的权重系数; 并使用权重系数导出格子波尔兹曼模型。 可以很容易地得出具有优异的稳定性和精度的晶格玻尔兹曼模型。

公开(公告)号：US08319297B2

公开(公告)日：2012-11-27

申请号：US12897914

申请日：2010-10-05

申请人： Byoung Chul Min ,  Gyung Min Choi ,  Kyung Ho Shin

发明人： Byoung Chul Min ,  Gyung Min Choi ,  Kyung Ho Shin

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286

摘要： Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.

摘要翻译： 公开了具有垂直各向异性自由层的磁性隧道结结构，并且可以通过保持自由磁化的磁化方向来实现减小切换和保持热稳定性所需的临界电流值，即使器件制造尺寸较小 层和固定磁性层构成彼此垂直的磁性隧道结结构。

公开(公告)号：US07312578B2

公开(公告)日：2007-12-25

申请号：US10808777

申请日：2004-03-24

申请人： Seung Min Lee ,  Byoung Chul Min ,  Young Hwan Choi

发明人： Seung Min Lee ,  Byoung Chul Min ,  Young Hwan Choi

IPC分类号： H01J17/16 ,  H01J61/30

CPC分类号： H01J61/04 ,  H01K1/28

摘要： A plasma lighting bulb is disclosed. The plasma lighting bulb includes a bulb emitting light, being formed of a transparent material, and having a plurality of grooves having a predetermined depth formed on a surface of the bulb, and a metal formed in the grooves, wherein a cross-section of the grooves is formed of one of a semicircular shape, a V-shape, and a polygonal shape.

摘要翻译： 公开了一种等离子体照明灯泡。 等离子体照明灯泡包括由透明材料形成的灯泡发光，并且具有形成在灯泡表面上的具有预定深度的多个槽以及形成在槽中的金属，其中横截面为 凹槽由半圆形，V形和多边形形状形成。