发明授权
- 专利标题: Method of slimming radiation-sensitive material lines in lithographic applications
- 专利标题(中): 在光刻应用中减少辐射敏感材料线的方法
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申请号: US12751362申请日: 2010-03-31
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公开(公告)号: US08338086B2公开(公告)日: 2012-12-25
- 发明人: Michael A. Carcasi , Benjamin M. Rathsack , Mark H. Somervell
- 申请人: Michael A. Carcasi , Benjamin M. Rathsack , Mark H. Somervell
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
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