发明授权
- 专利标题： Metal-induced crystallization of amorphous silicon in thin film transistors
- 专利标题（中）： 薄膜晶体管中非晶硅的金属诱导结晶
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申请号： US12841316申请日： 2010-07-22
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公开(公告)号： US08338237B2公开(公告)日： 2012-12-25
- 发明人: Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- 申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- 申请人地址： HK Clearwater Bay, Kowloon, Hong Kong
- 专利权人： Hong Kong University of Science and Technology
- 当前专利权人： Hong Kong University of Science and Technology
- 当前专利权人地址： HK Clearwater Bay, Kowloon, Hong Kong
- 代理机构： Ella Cheong Hong Kong
- 代理商 Sam T. Yip
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L33/08
摘要：
The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.
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