Invention Grant
- Patent Title: Shared photodiode image sensor
- Patent Title (中): 共享光电二极管图像传感器
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Application No.: US12626343Application Date: 2009-11-25
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Publication No.: US08338868B2Publication Date: 2012-12-25
- Inventor: Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
- Applicant: Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2008-0121949 20081203; KR10-2009-0043174 20090518
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113

Abstract:
An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
Public/Granted literature
- US20100133590A1 SHARED PHOTODIODE IMAGE SENSOR Public/Granted day:2010-06-03
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