发明授权
- 专利标题: Shared photodiode image sensor
- 专利标题(中): 共享光电二极管图像传感器
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申请号: US12626343申请日: 2009-11-25
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公开(公告)号: US08338868B2公开(公告)日: 2012-12-25
- 发明人: Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
- 申请人: Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 代理机构: Rabin & Berdo, P.C.
- 优先权: KR10-2008-0121949 20081203; KR10-2009-0043174 20090518
- 主分类号: H01L31/062
- IPC分类号: H01L31/062 ; H01L31/113
摘要:
An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
公开/授权文献
- US20100133590A1 SHARED PHOTODIODE IMAGE SENSOR 公开/授权日:2010-06-03
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