发明授权
US08338946B2 Semiconductor module, method of manufacturing semiconductor module, and mobile device
有权
半导体模块，制造半导体模块的方法和移动设备
- 专利标题： Semiconductor module, method of manufacturing semiconductor module, and mobile device
- 专利标题（中）： 半导体模块，制造半导体模块的方法和移动设备
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申请号： US12961171申请日： 2010-12-06
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公开(公告)号： US08338946B2公开(公告)日： 2012-12-25
- 发明人: Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
- 申请人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2007-020540 20070131; JP2007-090375 20070330; JP2008-013191 20080123
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L29/40
摘要：
An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area. The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.
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