发明授权
- 专利标题： Semiconductor chip with reinforcing through-silicon-vias
- 专利标题（中）： 半导体芯片具有加强通硅通孔
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申请号： US13456968申请日： 2012-04-26
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公开(公告)号： US08338961B2公开(公告)日： 2012-12-25
- 发明人: Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
- 申请人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
- 申请人地址： US CA Sunnyvale CA Markham
- 专利权人： Advanced Micro Devices, Inc.,ATI Technologies ULC
- 当前专利权人： Advanced Micro Devices, Inc.,ATI Technologies ULC
- 当前专利权人地址： US CA Sunnyvale CA Markham
- 代理商 Timothy M. Honeycutt
- 主分类号： H01L23/34
- IPC分类号： H01L23/34
摘要：
A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
公开/授权文献
- US20120205791A1 SEMICONDUCTOR CHIP WITH REINFORCING THROUGH-SILICON-VIAS 公开/授权日：2012-08-16
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