发明授权
US08343371B2 Apparatus and method for improving photoresist properties using a quasi-neutral beam
有权
使用准中性光束改善光致抗蚀剂性能的装置和方法
- 专利标题： Apparatus and method for improving photoresist properties using a quasi-neutral beam
- 专利标题（中）： 使用准中性光束改善光致抗蚀剂性能的装置和方法
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申请号： US12688755申请日： 2010-01-15
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公开(公告)号： US08343371B2公开(公告)日： 2013-01-01
- 发明人: Merritt Funk , Lee Chen , Radha Sundararajan
- 申请人： Merritt Funk , Lee Chen , Radha Sundararajan
- 申请人地址： JP
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP
- 主分类号： G01L21/30
- IPC分类号： G01L21/30
摘要：
The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).
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