Invention Grant
US08343371B2 Apparatus and method for improving photoresist properties using a quasi-neutral beam
有权
使用准中性光束改善光致抗蚀剂性能的装置和方法
- Patent Title: Apparatus and method for improving photoresist properties using a quasi-neutral beam
- Patent Title (中): 使用准中性光束改善光致抗蚀剂性能的装置和方法
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Application No.: US12688755Application Date: 2010-01-15
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Publication No.: US08343371B2Publication Date: 2013-01-01
- Inventor: Merritt Funk , Lee Chen , Radha Sundararajan
- Applicant: Merritt Funk , Lee Chen , Radha Sundararajan
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Main IPC: G01L21/30
- IPC: G01L21/30
Abstract:
The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).
Public/Granted literature
- US20110174606A1 Apparatus and Method for Improving Photoresist Properties Using a Quasi-Neutral Beam Public/Granted day:2011-07-21
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