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US08343853B2 Semiconductor wafer, semiconductor device using the same, and method and apparatus for producing the same 有权
半导体晶片，使用其的半导体器件及其制造方法和装置

Semiconductor wafer, semiconductor device using the same, and method and apparatus for producing the same
摘要：
A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100° C. per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about −70° C. per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100° C. or more.
摘要（中）：

一种处理半导体晶片的方法包括将晶片预热到小于峰值温度的预热温度，将晶片从预热温度加热至峰值温度，其平均温度为每秒约100℃或更高 并且在将晶片从预热温度加热到峰值温度之后立即以从峰值温度至预热温度平均约-70℃/秒以上的第二斜坡速率冷却晶片，其中峰值温度 约为1100℃以上。

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