发明授权
- 专利标题： Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones
- 专利标题（中）： 微结构器件包括具有自对准气隙的金属化结构和再填充气隙排除区
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申请号： US12708230申请日： 2010-02-18
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公开(公告)号： US08344474B2公开(公告)日： 2013-01-01
- 发明人: Robert Seidel , Thomas Werner
- 申请人： Robert Seidel , Thomas Werner
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102009010845 20090227
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
In a sophisticated metallization system, self-aligned air gaps may be provided in a locally selective manner by using a radiation sensitive material for filling recesses or for forming therein the metal regions. Consequently, upon selectively exposing the radiation sensitive material, a selective removal of exposed or non-exposed portions may be accomplished, thereby resulting in a highly efficient overall manufacturing flow.
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