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US08344475B2 Integrated circuit heating to effect in-situ annealing 有权
集成电路加热实现原位退火

Integrated circuit heating to effect in-situ annealing
摘要:
In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. In another system, the memory device is heated to reverse use-incurred degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device.
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