发明授权
- 专利标题: Integrated circuit heating to effect in-situ annealing
- 专利标题(中): 集成电路加热实现原位退火
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申请号: US12859554申请日: 2010-08-19
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公开(公告)号: US08344475B2公开(公告)日: 2013-01-01
- 发明人: Ian P. Shaeffer , Gary B. Bronner , Brent S. Haukness , Kevin S. Donnelly , Frederick A. Ware , Mark A. Horowitz
- 申请人: Ian P. Shaeffer , Gary B. Bronner , Brent S. Haukness , Kevin S. Donnelly , Frederick A. Ware , Mark A. Horowitz
- 申请人地址: US CA Sunnyvale
- 专利权人: Rambus Inc.
- 当前专利权人: Rambus Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理商 Charles Shemwell
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. In another system, the memory device is heated to reverse use-incurred degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device.
公开/授权文献
- US20110299317A1 INTEGRATED CIRCUIT HEATING TO EFFECT IN-SITU ANNEALING 公开/授权日:2011-12-08
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