Invention Grant
- Patent Title: Field emission device
- Patent Title (中): 场发射装置
-
Application No.: US12467401Application Date: 2009-05-18
-
Publication No.: US08344606B2Publication Date: 2013-01-01
- Inventor: Yoon-chul Son , Yong-chul Kim , In-taek Han , Ho-suk Kang
- Applicant: Yoon-chul Son , Yong-chul Kim , In-taek Han , Ho-suk Kang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0134970 20081226
- Main IPC: H01J17/49
- IPC: H01J17/49
Abstract:
A field emission device includes a substrate including a groove; a metal electrode disposed on a bottom surface of the groove; and a carbon nanotube (“CNT”) emitter. The CNT emitter includes an intermetallic compound layer disposed on the metal electrode and CNTs disposed on the intermetallic compound layer.
Public/Granted literature
- US20100164355A1 FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-01
Information query
