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US08347201B2 Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code 有权
具有嵌入式纠错码的存储器件的读取方法和具有嵌入式纠错码的存储器件

Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code
摘要：
A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A0, A1, . . . , ALS-1) to generate a first recovered string (S1), and performing a first decoding attempt using the first recovered string (S1). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S2-SN) is generated. On the basis of a comparison between the first recovered string (S1) and the second recovered string (S2-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).
摘要（中）：

具有纠错编码的存储器件的读取方法设想的步骤是：执行多个存储器位置（A0，A1，...，ALS-1）的第一读取以产生第一恢复串（S1） ，并且使用第一恢复串执行第一解码尝试（S1）。 当第一解码尝试失败时，至少读取一次存储器位置，并产生至少一个第二恢复字符串（S2-SN）。 基于第一恢复串（S1）和第二恢复串（S2-SN）之间的比较，生成修改串（SM），其中存在擦除（X），并且至少一个第二解码尝试 使用修改后的字符串（SM）进行。

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