发明授权
- 专利标题: Methods of fabricating light emitting diode devices
- 专利标题(中): 制造发光二极管器件的方法
-
申请号: US13053701申请日: 2011-03-22
-
公开(公告)号: US08349628B2公开(公告)日: 2013-01-08
- 发明人: Yung-Chang Chen , Hsin-Hsien Wu , Chyi Shyuan Chern , Ching-Wen Hsiao , Fu-Wen Liu , Kuang-Huan Hsu
- 申请人: Yung-Chang Chen , Hsin-Hsien Wu , Chyi Shyuan Chern , Ching-Wen Hsiao , Fu-Wen Liu , Kuang-Huan Hsu
- 申请人地址: TW Hsin-Chu
- 专利权人: TSMC Solid State Lighting Ltd.
- 当前专利权人: TSMC Solid State Lighting Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An embodiment of the disclosure includes a method of fabricating a plurality of light emitting diode devices. A plurality of LED dies is provided. The LED dies are bonded to a carrier substrate. A patterned mask layer comprising a plurality of openings is formed on the carrier substrate. Each one of the plurality of LED dies is exposed through one of the plurality of the openings respectively. Each of the plurality of openings is filled with a phosphor. The phosphor is cured. The phosphor and the patterned mask layer are polished to thin the phosphor covering each of the plurality of LED dies. The patterned mask layer is removed after polishing the phosphor.
公开/授权文献
- US20120244652A1 METHODS OF FABRICATING LIGHT EMITTING DIODE DEVICES 公开/授权日:2012-09-27
信息查询
IPC分类: