发明授权
- 专利标题： Implanted metal silicide for semiconductor device
- 专利标题（中）： 用于半导体器件的注入金属硅化物
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申请号： US12176133申请日： 2008-07-18
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公开(公告)号： US08349732B2公开(公告)日： 2013-01-08
- 发明人: Harry Chuang , Hung-Chih Tsai , Keh-Chiang Ku , Kong-Beng Thei , Mong Song Liang
- 申请人： Harry Chuang , Hung-Chih Tsai , Keh-Chiang Ku , Kong-Beng Thei , Mong Song Liang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/44
摘要：
A device and a method for forming a metal silicide is presented. A device, which includes a gate region, a source region, and a drain region, is formed on a substrate. A metal is disposed on the substrate, followed by a first anneal, forming a metal silicide on at least one of the gate region, the source region, and the drain region. The unreacted metal is removed from the substrate. The metal silicide is implanted with atoms. The implant is followed by a super anneal of the substrate.
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