发明授权
- 专利标题： Amorphous carbon deposition method for improved stack defectivity
- 专利标题（中）： 无定形碳沉积方法，提高了堆叠缺陷率
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申请号： US13455916申请日： 2012-04-25
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公开(公告)号： US08349741B2公开(公告)日： 2013-01-08
- 发明人: Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
- 申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/32
摘要：
Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.
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