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发明授权
US08350247B2 Resistive random access memory having a solid solution layer and method of manufacturing the same 有权
具有固溶层的电阻随机存取存储器及其制造方法

Resistive random access memory having a solid solution layer and method of manufacturing the same
摘要：
A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.
摘要（中）：

提供了具有固溶层的电阻随机存取存储器（RRAM）和制造RRAM的方法。 RRAM包括下电极，下电极上的固溶层，固溶层上的电阻层和电阻层上的上电极。 制造RRAM的方法包括形成下电极，在下电极上形成固溶层，在固体层上形成电阻层，在电阻层上形成上电极，其中RRAM由过渡金属固体 解。

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