发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12619222申请日: 2009-11-16
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公开(公告)号: US08350332B2公开(公告)日: 2013-01-08
- 发明人: Tsutomu Oosuka , Yoshihiro Sato , Hisashi Ogawa
- 申请人: Tsutomu Oosuka , Yoshihiro Sato , Hisashi Ogawa
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2008-066543 20080314
- 主分类号: H01L27/092
- IPC分类号: H01L27/092
摘要:
A first and second gate electrodes are formed on a first and second active regions, respectively. The first and second gate electrodes have a first and second metal-containing conductive films, respectively. The first and second metal-containing conductive films are formed on the isolation region for segmenting the first and second active regions to be spaced apart from each other. A third metal-containing conductive film, which is a part of each of the first and second gate electrodes, is continuously formed from a top of the first metal-containing conductive film through a top of the isolation region to a top of the second metal-containing conductive film. The third metal-containing conductive film is in contact with the first and second metal-containing conductive films.