- 专利标题: Magnetic random access memory
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申请号: US12297153申请日: 2007-04-09
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公开(公告)号: US08351249B2公开(公告)日: 2013-01-08
- 发明人: Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
- 申请人: Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
- 申请人地址: JP Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Young & Thompson
- 优先权: JP2006-108480 20060411
- 国际申请: PCT/JP2007/057839 WO 20070409
- 国际公布: WO2007/119708 WO 20071025
- 主分类号: G11C11/15
- IPC分类号: G11C11/15
摘要:
A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
公开/授权文献
- US20100149862A1 MAGNETIC RANDOM ACCESS MEMORY 公开/授权日:2010-06-17
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