Invention Grant
- Patent Title: Semiconductor light-emitting element and manufacturing method thereof
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US11689246Application Date: 2007-03-21
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Publication No.: US08354681B2Publication Date: 2013-01-15
- Inventor: Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
- Applicant: Yasushi Hattori , Shinya Nunoue , Shinji Saito , Genichi Hatakoshi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-184644 20060704
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.
Public/Granted literature
- US20080006838A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-01-10
Information query
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