Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13023889Application Date: 2011-02-09
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Publication No.: US08354712B2Publication Date: 2013-01-15
- Inventor: Mitsuhiro Hamada , Katsuyoshi Jokyu
- Applicant: Mitsuhiro Hamada , Katsuyoshi Jokyu
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2010-069023 20100325
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76
Abstract:
A body contact layer 18 is formed on the side of a recessed structure 17 as well as in the bottom of the recessed structure 17, so that a contact area between the body contact layer 18 and a well layer 12 is increased and the amount of dopant implanted to the body contact layer 18 is suppressed.
Public/Granted literature
- US20110233663A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-09-29
Information query
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