发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12461160申请日: 2009-08-03
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公开(公告)号: US08354731B2公开(公告)日: 2013-01-15
- 发明人: Hiromichi Takaoka , Yoshitaka Kubota , Hiroshi Tsuda
- 申请人: Hiromichi Takaoka , Yoshitaka Kubota , Hiroshi Tsuda
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2008-207356 20080811
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
The semiconductor device includes: a substrate; an electric fuse that includes a lower-layer wiring formed on the substrate, a first via provided on the lower-layer wiring and connected to the lower-layer wiring, and an upper-layer wiring provided on the first via and connected to the first via, a flowing-out portion of a conductive material constituting the electric fuse being formed in a cut-off state of the electric fuse; and a heat diffusion portion that includes a heat diffusion wiring that is formed in the same layer as one of the upper-layer wiring and the lower-layer wiring and is placed on a side of the one of the upper-layer wiring and the lower-layer wiring, the heat diffusion portion being electrically connected to the one of the upper-layer wiring and the lower-layer wiring.
公开/授权文献
- US20100032798A1 Semiconductor device 公开/授权日:2010-02-11
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