- 专利标题: Method of manufacturing light emitting device
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申请号: US13360896申请日: 2012-01-30
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公开(公告)号: US08357551B2公开(公告)日: 2013-01-22
- 发明人: Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
- 申请人: Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
- 申请人地址: JP
- 专利权人: Semiconductor Energy Labortory Co., Ltd.
- 当前专利权人: Semiconductor Energy Labortory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2002-179078 20020619; JP2002-189409 20020628
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.
公开/授权文献
- US20120129280A1 Method of Manufacturing Light Emitting Device 公开/授权日:2012-05-24
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