Invention Grant
- Patent Title: Methods of forming integrated circuits
- Patent Title (中): 形成集成电路的方法
-
Application No.: US13042539Application Date: 2011-03-08
-
Publication No.: US08357579B2Publication Date: 2013-01-22
- Inventor: King-Yuen Wong , Ming-Lung Cheng , Chien-Tai Chan , Da-Wen Lin , Chung-Cheng Wu
- Applicant: King-Yuen Wong , Ming-Lung Cheng , Chien-Tai Chan , Da-Wen Lin , Chung-Cheng Wu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L21/336 ; H01L29/76 ; H01L21/02
Abstract:
A method of forming an integrated circuit includes forming a gate structure over a substrate. Portions of the substrate are removed to form recesses adjacent to the gate structure. A dopant-rich layer having first type dopants is formed on a sidewall and a bottom of each of the recesses. A silicon-containing material structure is formed in each of the recesses. The silicon-containing material structure has second type dopants. The second type dopants are opposite to the first type dopants.
Public/Granted literature
- US20120135575A1 METHODS OF FORMING INTEGRATED CIRCUITS Public/Granted day:2012-05-31
Information query
IPC分类:
