A semiconductor power device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer. At least a recessed epitaxial structure is disposed within a cell region and the recessed epitaxial structure may be formed in a pillar or stripe shape. A first vertical diffusion region is disposed in the third semiconductor layer and the recessed epitaxial structure is surrounded by the first vertical diffusion region. A source conductor is disposed on the recessed epitaxial structure and a trench isolation is disposed within a junction termination region surrounding the cell region. In addition, the trench isolation includes a trench, a first insulating layer on an interior surface of the trench, and a conductive layer filled into the trench, wherein the source conductor connects electrically with the conductive layer.