公开(公告)号：US08748973B2

公开(公告)日：2014-06-10

申请号：US13433302

申请日：2012-03-29

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/2255 ,  H01L21/2256 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/6659 ,  H01L29/66734 ,  H01L29/7811 ,  H01L2924/13091

Abstract: A super junction transistor includes a drain substrate, an epitaxial layer, wherein the epitaxial layer is disposed on the drain substrate, a plurality of gate structure units embedded on the surface of the epitaxial layer, a plurality of trenches disposed in the epitaxial layer between the drain substrate and the gate structure units, a buffer layer in direct contact with the inner surface of the trenches, a plurality of body diffusion regions with a first conductivity type adjacent to the outer surface of the trenches, wherein there is at least a PN junction on the interface between the body diffusion region and the epitaxial layer, and a doped source region, wherein the doped source region is disposed in the epitaxial layer and is adjacent to the gate structure unit.

Abstract translation: 超结晶体管包括漏极衬底，外延层，其中外延层设置在漏极衬底上，多个栅极结构单元嵌入在外延层的表面上，多个沟槽设置在外延层之间 漏极衬底和栅极结构单元，与沟槽的内表面直接接触的缓冲层，具有与沟槽的外表面相邻的第一导电类型的多个体扩散区，其中至少存在PN结 在体扩散区域和外延层之间的界面上，以及掺杂源极区域，其中掺杂源极区域设置在外延层中并且与栅极结构单元相邻。

公开(公告)号：US20140015040A1

公开(公告)日：2014-01-16

申请号：US13589199

申请日：2012-08-20

Applicant: Yung-Fa Lin ,  Chia-Hao Chang ,  Yi-Chun Shih

Inventor： Yung-Fa Lin ,  Chia-Hao Chang ,  Yi-Chun Shih

IPC: H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/7397 ,  H01L29/7827

Abstract: A power semiconductor device includes a substrate, a semiconductor layer grown on the substrate, a plurality of alternately arranged first conductivity type doping trenches and second conductivity type doping trenches in the semiconductor substrate, a first diffusion region of the first conductivity type around each of the first conductivity type doping trenches, and a second diffusion region of the second conductivity type around each of the second conductivity type doping trenches, wherein distance between an edge of the first conductivity type doping trench and PN junction between the first and second diffusion regions substantially equals to a distance between an edge of the second conductivity type doping trench and the PN junction.

Abstract translation: 功率半导体器件包括衬底，在衬底上生长的半导体层，在半导体衬底中多个交替布置的第一导电类型掺杂沟槽和第二导电类型掺杂沟槽，第一导电类型的第一扩散区域围绕每个 第一导电型掺杂沟槽和第二导电类型的第二扩散区域围绕每个第二导电类型掺杂沟槽，其中第一导电类型掺杂沟槽的边缘与第一和第二扩散区域之间的PN结之间的距离基本上等于 到第二导电类型掺杂沟槽的边缘与PN结之间的距离。

公开(公告)号：US20130130485A1

公开(公告)日：2013-05-23

申请号：US13338256

申请日：2011-12-28

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

IPC: H01L21/329

CPC classification number: H01L21/22 ,  H01L21/2254 ,  H01L21/2256 ,  H01L21/2257 ,  H01L21/2652 ,  H01L21/28 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for fabricating a Schottky device includes the following sequences. First, a substrate with a first conductivity type is provided and an epitaxial layer with the first conductivity type is grown on the substrate. Then, a patterned dielectric layer is formed on the epitaxial layer, and a metal silicide layer is formed on a surface of the epitaxial layer. A dopant source layer with a second conductivity type is formed on the metal silicide layer, followed by applying a thermal drive-in process to diffuse the dopants inside the dopant source layer into the epitaxial layer. Finally, a conductive layer is formed on the metal silicide layer.

公开(公告)号：US20130105891A1

公开(公告)日：2013-05-02

申请号：US13533957

申请日：2012-06-26

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L29/7827 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0869 ,  H01L29/0886 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

Abstract: The present invention provides a power transistor device including a substrate, an epitaxial layer, a dopant source layer, a doped drain region, a first insulating layer, a gate structure, a second insulating layer, a doped source region, and a metal layer. The substrate, the doped drain region, and the doped source region have a first conductive type, while the epitaxial layer has a second conductive type. The epitaxial layer is formed on the substrate and has at least one through hole through the epitaxial layer. The first insulating layer, the gate structure, and the second insulating layer are formed sequentially on the substrate in the through hole. The doped drain region and doped source region are formed in the epitaxial layer at one side of the through hole. The metal layer is formed on the epitaxial layer and extends into the through hole to contact the doped source region.

Abstract translation: 本发明提供一种功率晶体管器件，其包括衬底，外延层，掺杂剂源层，掺杂漏极区，第一绝缘层，栅极结构，第二绝缘层，掺杂源极区和金属层。 衬底，掺杂漏极区域和掺杂源极区域具有第一导电类型，而外延层具有第二导电类型。 外延层形成在衬底上并且具有穿过外延层的至少一个通孔。 第一绝缘层，栅极结构和第二绝缘层依次形成在通孔中的基板上。 掺杂漏极区域和掺杂源极区域形成在通孔一侧的外延层中。 金属层形成在外延层上并延伸到通孔中以与掺杂源极区接触。

公开(公告)号：US20120306006A1

公开(公告)日：2012-12-06

申请号：US13227472

申请日：2011-09-07

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

IPC: H01L29/78

CPC classification number: H01L29/7811 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7803 ,  H01L29/7809

Abstract: A semiconductor power device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer. At least a recessed epitaxial structure is disposed within a cell region and the recessed epitaxial structure may be formed in a pillar or stripe shape. A first vertical diffusion region is disposed in the third semiconductor layer and the recessed epitaxial structure is surrounded by the first vertical diffusion region. A source conductor is disposed on the recessed epitaxial structure and a trench isolation is disposed within a junction termination region surrounding the cell region. In addition, the trench isolation includes a trench, a first insulating layer on an interior surface of the trench, and a conductive layer filled into the trench, wherein the source conductor connects electrically with the conductive layer.

Abstract translation: 半导体功率器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层以及第二半导体层上的第三半导体层。 至少凹入的外延结构设置在单元区域内，并且凹入的外延结构可以形成为柱状或条形。 第一垂直扩散区域设置在第三半导体层中，并且凹入的外延结构被第一垂直扩散区域包围。 源极导体设置在凹陷的外延结构上，并且沟槽隔离设置在围绕电池区的连接终端区域内。 此外，沟槽隔离包括沟槽，在沟槽的内表面上的第一绝缘层和填充到沟槽中的导电层，其中源极导体与导电层电连接。

公开(公告)号：US20120267708A1

公开(公告)日：2012-10-25

申请号：US13234150

申请日：2011-09-16

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Jing-Qing Chan ,  Yi-Chun Shih

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Jing-Qing Chan ,  Yi-Chun Shih

IPC: H01L29/78

CPC classification number: H01L29/7811 ,  H01L21/2256 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/66727

Abstract: A termination structure for a power MOSFET device includes a substrate, an epitaxial layer on the substrate, a trench in the epitaxial layer, a first insulating layer within the trench, a first conductive layer atop the first insulating layer, and a column doping region in the epitaxial layer and in direct contact with the first conductive layer. The first conductive layer is in direct contact with the first insulating layer and is substantially level with a top surface of the epitaxial layer. The first conductive layer comprises polysilicon, titanium, titanium nitride or aluminum.

Abstract translation: 功率MOSFET器件的端接结构包括衬底，衬底上的外延层，外延层中的沟槽，沟槽内的第一绝缘层，第一绝缘层顶部的第一导电层和第一绝缘层中的列掺杂区 外延层并与第一导电层直接接触。 第一导电层与第一绝缘层直接接触并且基本上与外延层的顶表面平齐。 第一导电层包括多晶硅，钛，氮化钛或铝。

公开(公告)号：US20120181576A1

公开(公告)日：2012-07-19

申请号：US13238189

申请日：2011-09-21

Applicant: Yung-Fa LIN ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

Inventor： Yung-Fa LIN ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

IPC: H01L29/739

CPC classification number: H01L29/7395 ,  H01L29/1095

Abstract: An insulated gate bipolar transistor includes: a collector layer; a drift layer formed on and connected to the collector layer; a gate structure including a dielectric layer formed on the drift layer, and a conductive layer formed on the dielectric layer; a first emitter structure including a well region formed within the drift layer and partially connected to the dielectric layer of the gate structure, a source region formed within the well region just underneath a top surface of the well region, and a first electrode formed on the top surface of the well region and connected to the well region and the source region; and a second emitter structure spaced apart from the gate structure and the first emitter structure, and including a bypass region formed on the top surface of the drift layer, and a second electrode formed on the bypass region.

Abstract translation: 绝缘栅双极晶体管包括：集电极层; 形成在集电极层上并连接到集电极层的漂移层; 包括形成在所述漂移层上的电介质层的栅极结构和形成在所述电介质层上的导电层; 第一发射极结构，其包括形成在所述漂移层内且部分地连接到所述栅极结构的介电层的阱区，形成在所述阱区的顶表面正下方的阱区内的源极区，以及形成在所述阱区上的第一电极 并且连接到阱区和源极区; 以及与栅极结构和第一发射极结构间隔开的第二发射极结构，并且包括形成在漂移层的顶表面上的旁路区域和形成在旁路区域上的第二电极。

公开(公告)号：US08007147B2

公开(公告)日：2011-08-30

申请号：US12436145

申请日：2009-05-06

Applicant: Yung-Fa Lin

Inventor： Yung-Fa Lin

IPC: B60Q1/32 ,  F21V9/08 ,  F21V1/00

CPC classification number: B60Q1/323

Abstract: A vehicle door safety warning lamp is provided. A light source is respectively disposed on each side of a light socket, and each light source is electrically connected to a power supply device of a vehicle. A white or transparent first shade body and a colored (for example, red or yellow) second shade body cover the two sides of the light socket. When a vehicle door is opened, the light sources disposed on the two sides of the light socket emit lights at the same time, light rays from the first shade body are used to irradiate a traveling path of passengers, and light rays from the second shade body are used to warn other vehicles at the back, thereby improving the safety of the passengers when getting on and off the passenger vehicles (for example, buses or touring vehicles).

Abstract translation: 提供车门安全警示灯。 光源分别设置在灯座的每一侧，并且每个光源电连接到车辆的电源装置。 白色或透明的第一个遮光罩和彩色（例如红色或黄色）第二个遮光罩遮盖灯座的两侧。 当车门打开时，设置在灯座两侧的光源同时发光，来自第一遮阳体的光线用于照射乘客的行进路径，并且来自第二帘子的光线 身体用于警告后方的其他车辆，从而提高乘客在乘客车辆（例如公共汽车或旅游车辆）上的安全性。

公开(公告)号：US20100213868A1

公开(公告)日：2010-08-26

申请号：US12389599

申请日：2009-02-20

Applicant: Yung-Fa Lin

Inventor： Yung-Fa Lin

IPC: H05B37/02 ,  B60Q1/00 ,  B60Q1/26

CPC classification number: B60Q1/0483 ,  B60Q1/18 ,  B60Q1/2607 ,  B60Q2400/30 ,  H05B33/0803 ,  H05B33/0845

Abstract: A vehicle multifunctional lamp is provided. The vehicle multifunctional lamp mainly includes a lamp body, a lamp shade, and light source sets. The light source sets have at least two sets. In the at least two light source sets, at least one set is daylight lamps, and the rest is one or more of others such as sidelights, fog lamps, or turn signal lamps. Therefore, the lamp formed of the same lamp body and the lamp shade has car indicators having more than two functions. Thereby, the present invention is convenient to install.

Abstract translation: 提供车辆多功能灯。 车用多功能灯主要包括灯体，灯罩和光源组。 光源组至少有两组。 在所述至少两个光源组中，至少一组是日光灯，其余的是一个或多个其它灯，例如侧灯，雾灯或转向灯。 因此，由同一灯体形成的灯和灯罩具有具有两种以上功能的汽车指示灯。 由此，本发明的安装方便。

公开(公告)号：US20090213603A1

公开(公告)日：2009-08-27

申请号：US12037313

申请日：2008-02-26

Applicant: Yung-Fa LIN

Inventor： Yung-Fa LIN

IPC: B60Q1/00

CPC classification number: B60Q3/283 ,  F16H59/0278

Abstract: A projection gear knob is assembled on an end portion of a car gear lever. A projection lamp, a projection film are accommodated and a transparent push-button is assembled in the gear knob, such that interesting, ornate, or beautiful projection film pattern is irradiated on inner top of the car. The projection lamp is freely switched by an outer light-transmissive push-button, so as to increase interest and beauty in the decoration of the car.

Abstract translation: 一个投影齿轮旋钮组装在一个汽车变速杆的一个端部上。 投影灯，投影膜被容纳，并且透明按钮组装在齿轮旋钮中，使得有趣的，华丽的或美丽的投影膜图案被照射在汽车的内部顶部。 投影灯由外部透光按钮自由切换，以增加汽车装饰的兴趣和美观。