Invention Grant
- Patent Title: Ultra-low voltage level shifting circuit
- Patent Title (中): 超低电压电平移位电路
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Application No.: US13308035Application Date: 2011-11-30
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Publication No.: US08358165B2Publication Date: 2013-01-22
- Inventor: Shao-Yu Chou , Yen-Huei Chen , Jui-Jen Wu
- Applicant: Shao-Yu Chou , Yen-Huei Chen , Jui-Jen Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A voltage level shifter having an internal low voltage power supply (VCCL) and an external high voltage power supply (VCCH) includes a first PMOS transistor and a second PMOS transistor each with a source connected to the VCCH, a gate of the first PMOS transistor being coupled to a drain of the second PMOS transistor, and a gate of the second PMOS transistor being coupled to a drain of the first PMOS transistor. The voltage level shifter further includes a first NMOS transistor with a source connected to a ground (VSS) and a gate connected to a first signal swinging between the VCCL and the VSS, and a first blocking device coupled between the drain of the first PMOS transistor and a drain of the first NMOS transistor, such that the voltage level shifter can operate at a lower VCCL.
Public/Granted literature
- US20120306537A1 ULTRA-LOW VOLTAGE LEVEL SHIFTING CIRCUIT Public/Granted day:2012-12-06
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