Invention Grant
- Patent Title: Memory device and method
- Patent Title (中): 内存设备和方法
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Application No.: US13245856Application Date: 2011-09-26
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Publication No.: US08358557B2Publication Date: 2013-01-22
- Inventor: Joseph Tzou , Thinh Tran , Jun Li
- Applicant: Joseph Tzou , Thinh Tran , Jun Li
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A method of accessing a memory device multiple times in a same time period can include, in a first sequence of accesses, starting an access operation to one of a plurality of banks in synchronism with a first part of a first clock cycle and starting an access operation to another of the plurality of banks in synchronism with a second part of the first clock cycle, each bank having separate access circuits; and the time between consecutive accesses is faster than an access speed for back-to-back accesses to a same one of the banks; wherein during the access operations, storage locations of each bank are accessed in a same time period.
Public/Granted literature
- US20120014202A1 MEMORY DEVICE AND METHOD Public/Granted day:2012-01-19
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