Invention Grant
- Patent Title: Barrier layer for copper interconnect
- Patent Title (中): 铜互连屏障层
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Application No.: US12761805Application Date: 2010-04-16
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Publication No.: US08361900B2Publication Date: 2013-01-29
- Inventor: Shing-Chyang Pan , Han-Hsin Kuo , Chung-Chi Ko , Ching-Hua Hsieh
- Applicant: Shing-Chyang Pan , Han-Hsin Kuo , Chung-Chi Ko , Ching-Hua Hsieh
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A copper interconnect includes a copper layer formed in a dielectric layer. A liner is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the liner and the dielectric layer. The barrier layer is a metal oxide.
Public/Granted literature
- US20110256715A1 BARRIER LAYER FOR COPPER INTERCONNECT Public/Granted day:2011-10-20
Information query
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