发明授权
- 专利标题: NAND based resistive sense memory cell architecture
- 专利标题(中): 基于NAND的电阻式读写单元架构
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申请号: US12903716申请日: 2010-10-13
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公开(公告)号: US08363442B2公开(公告)日: 2013-01-29
- 发明人: Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
- 申请人: Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
- 申请人地址: US CA Scotts Valley
- 专利权人: Seagate Technology LLC
- 当前专利权人: Seagate Technology LLC
- 当前专利权人地址: US CA Scotts Valley
- 代理机构: Hall Estill, et al.
- 主分类号: G11C5/02
- IPC分类号: G11C5/02
摘要:
Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.
公开/授权文献
- US20110032749A1 NAND Based Resistive Sense Memory Cell Architecture 公开/授权日:2011-02-10
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