发明授权
US08367533B2 Semiconductor devices including doped metal silicide patterns and related methods of forming such devices
有权
包括掺杂金属硅化物图案的半导体器件和形成这种器件的相关方法
- 专利标题: Semiconductor devices including doped metal silicide patterns and related methods of forming such devices
- 专利标题(中): 包括掺杂金属硅化物图案的半导体器件和形成这种器件的相关方法
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申请号: US13152406申请日: 2011-06-03
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公开(公告)号: US08367533B2公开(公告)日: 2013-02-05
- 发明人: Jung-Ho Yun , Gil-heyun Choi , Jong-Myeong Lee
- 申请人: Jung-Ho Yun , Gil-heyun Choi , Jong-Myeong Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR2007-0051555 20070528
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
Provided are a semiconductor device and a method of forming the same. The method includes forming an interlayer dielectric on a semiconductor substrate, forming a contact hole in the interlayer dielectric to expose the semiconductor substrate, forming a metal pattern including a dopant on the exposed semiconductor substrate, and performing a heat treatment process to react the semiconductor substrate with the metal pattern to form a metal silicide pattern. The heat treatment process includes diffuses the dopant into the semiconductor substrate.