发明授权
- 专利标题: MEMS device etch stop
- 专利标题(中): MEMS器件蚀刻停止
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申请号: US13089027申请日: 2011-04-18
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公开(公告)号: US08368152B2公开(公告)日: 2013-02-05
- 发明人: Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
- 申请人: Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L29/84
- IPC分类号: H01L29/84 ; H01L27/14 ; H01L21/00 ; G01P15/08
摘要:
The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.
公开/授权文献
- US20120261830A1 MEMS DEVICE ETCH STOP 公开/授权日:2012-10-18
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