Support structure for TSV in MEMS structure
    1.
    发明授权
    Support structure for TSV in MEMS structure 有权
    支持结构的TSV在MEMS结构

    公开(公告)号:US09085456B2

    公开(公告)日:2015-07-21

    申请号:US13471229

    申请日:2012-05-14

    摘要: An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.

    摘要翻译: 一个实施例是用于形成微机电系统(MEMS)装置的方法。 该方法包括在第一衬底上形成MEMS结构,其中MEMS结构包括可移动元件; 在所述第一基板上形成接合结构; 以及在所述第一基板上形成支撑结构,其中所述支撑结构从所述接合结构突出。 该方法还包括将MEMS结构接合到第二衬底; 以及在所述第二基板的背面上形成通过(TSV)的贯穿基板,其中所述上覆的TSV与所述接合结构和所述支撑结构对准。

    Method for handling a thin substrate and for substrate capping
    2.
    发明授权
    Method for handling a thin substrate and for substrate capping 有权
    处理薄基板和基板封盖的方法

    公开(公告)号:US08796110B2

    公开(公告)日:2014-08-05

    申请号:US13214917

    申请日:2011-08-22

    IPC分类号: H01L21/306

    摘要: An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.

    摘要翻译: 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后,将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料,使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。

    Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same
    5.
    发明授权
    Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same 有权
    具有通孔的微电子机械系统(MEMS)结构通孔及其形成方法

    公开(公告)号:US09466532B2

    公开(公告)日:2016-10-11

    申请号:US13429029

    申请日:2012-03-23

    IPC分类号: H01L21/768 B81C1/00 B82Y30/00

    摘要: The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.

    摘要翻译: 本公开内容包括微机电系统(MEMS)结构及其形成方法。 MEMS结构的衬底通过在高加工温度下的熔融粘合而结合在一起,这使得在MEMS结构的密封腔之前能够更好地从基板中的电介质材料中去除化学物质。 MEMS结构的熔合结合减少了化学物质的脱气,并与腔形成过程相容。 通过熔接结合的MEMS结构由于较高的接合率而与共晶接合机械地更强。 此外,熔接可以在MEMS结构中形成贯穿衬底通孔(TSV)。

    Electrical bypass structure for MEMS device
    8.
    发明授权
    Electrical bypass structure for MEMS device 有权
    MEMS器件的电气旁路结构

    公开(公告)号:US08878312B2

    公开(公告)日:2014-11-04

    申请号:US13195243

    申请日:2011-08-01

    IPC分类号: H01L29/84 B81C1/00

    摘要: An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.

    摘要翻译: 公开了一种包括用于互补金属氧化物半导体(CMOS)和/或微机电系统(MEMS)器件)的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构,其接触所述第一衬底的一部分,其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

    Method for Handling a Thin Substrate and for Substrate Capping
    9.
    发明申请
    Method for Handling a Thin Substrate and for Substrate Capping 有权
    处理薄基板和基板上盖的方法

    公开(公告)号:US20130052797A1

    公开(公告)日:2013-02-28

    申请号:US13214917

    申请日:2011-08-22

    IPC分类号: H01L21/306

    摘要: An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.

    摘要翻译: 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后,将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料,使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。

    MEMS structure and method of forming same
    10.
    发明授权
    MEMS structure and method of forming same 有权
    MEMS结构及其形成方法

    公开(公告)号:US09065358B2

    公开(公告)日:2015-06-23

    申请号:US13219927

    申请日:2011-08-29

    IPC分类号: G01P15/125 H02N1/00 G01P15/08

    摘要: A microelectromechanical system (MEMS) device that reduces or eliminates stiction includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. A protrusion extends from the substrate and is configured to contact the movable element when the moving element moves in the at least one degree of freedom. The protrusion comprises a surface having a low surface energy relative a silicon oxide surface. The protrusion may be coupled to a voltage potential node to avoid or counteract electrostatic forces.

    摘要翻译: 减少或消除静摩擦的微机电系统(MEMS)装置包括至少部分地悬挂在衬底上并具有至少一个自由度的衬底和可移动元件。 突起从衬底延伸并且构造成当移动元件以至少一个自由度移动时接触可移动元件。 突起包括相对于氧化硅表面具有低表面能的表面。 突起可以耦合到电压电位节点以避免或抵消静电力。