Invention Grant
- Patent Title: Semiconductor element and package having semiconductor element
- Patent Title (中): 具有半导体元件的半导体元件和封装
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Application No.: US12796293Application Date: 2010-06-08
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Publication No.: US08368227B2Publication Date: 2013-02-05
- Inventor: Bin-Hong Cheng
- Applicant: Bin-Hong Cheng
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: McCracken & Frank LLC
- Priority: TW98145578A 20091229
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L21/50

Abstract:
The present disclosure relates to a semiconductor process, a semiconductor element and a package having a semiconductor element. The semiconductor element includes a base material and at least one through via structure. The base material has a first surface, a second surface, at least one groove and at least one foundation. The groove opens at the first surface, and the foundation is disposed on the first surface. The through via structure is disposed in the groove of the base material, and protrudes from the first surface of the base material. The foundation surrounds the through via structure. Whereby, the foundation increases the strength of the through via structure, and prevents the through via structure from cracking.
Public/Granted literature
- US20110156267A1 Semiconductor Process, Semiconductor Element and Package Having Semiconductor Element Public/Granted day:2011-06-30
Information query
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